BSS223PW H6327 Infineon Technologies, BSS223PW H6327 Datasheet - Page 6

• Manufacturer Part Number: BSS223PW H6327
• Manufacturer: Infineon Technologies

Specifications of BSS223PW H6327

• Package: SOT-323
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 1,200.0 mOhm
• Rds (on) (max) (@2.5v): 2,100.0 mOhm

9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
Rev 1.5
pF
10
10
1.6
1.2
0.8
0.6
0.4
0.2
1
0
-60
2
1
0
DS
= f(T j )
)
2
D
-20
GS
= -0.39 A, V
=0, f=1 MHz; T j = 25 °C
4
20
6
8
60
GS
98%
typ.
10
= -4.5 V
100
12
°C
C
C
C
T
-V
V
iss
oss
rss
j
DS
160
15
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
-10
-10
-10
-10
1.6
1.2
0.8
0.6
0.4
0.2
A
V
-1
-2
1
0
-60
1
0
0
= f (T j )
SD
BSS 223PW
)
-0.4
-20
GS
-0.8
= V
20
DS
-1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
2%
-1.6
60
typ.
98%
-2
BSS 223PW
100
2011-07-13
-2.4
°C
V
V
T
SD
j
160
-3