APT50GT120B2RDLG Microsemi Corporation, APT50GT120B2RDLG Datasheet

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APT50GT120B2RDLG

Manufacturer Part Number
APT50GT120B2RDLG
Description
Insulated Gate Bipolar Transistor - Resonant Mode; Package: T-MAX ; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50;
Manufacturer
Microsemi Corporation
Datasheet
1.APT50GT120B2RDLG.pdf (9 pages)
TYPICAL PERFORMANCE CURVES
The Thunderbolt IGBT
voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT
fers superior ruggedness and ultrafast switching speed.
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Features
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• Low forward Diode Voltage (V
• Ultrasoft Recovery Diode
V
Symbol
Symbol
T
V
V
SSOA
R
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
G(int)
CES
T
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
®
Resonant Mode IGBT
used in this Resonant Mode Combi is a new generation of high
F
)
• SSOA Rated
• RoHS Compliant
1
(V
CE
CE
CE
@ T
8
= V
= 1200V, V
= 1200V, V
Microsemi Website - http://www.microsemi.com
@ T
GE
GE
C
C
GE
GE
= 150°C
J
= 110°C
= 15V, I
= 15V, I
C
= 150°C
, I
= ±20V)
= 25°C
C
GE
= 2mA, T
GE
GE
C
C
= 0V, I
= 50A, T
= 50A, T
= 0V, T
= 0V, T
j
C
Typical Applications
Induction Heating
Welding
Medical
High Power Telecom
Resonant Mode Phase Shifted
Bridge
= 25°C)
= 3mA)
j
j
= 25°C)
= 125°C)
j
j
®
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
C
of-
= 25°C unless otherwise specifi ed.
APT50GT120B2RDL(G)
1200
APT50GT120B2RDL(G)
MIN
4.5
2.7
150A @ 1200V
-55 to 150
APT50GT120B2RDL(G)
1200
106
150
694
300
TYP
±30
5.5
3.2
4.0
50
5
1200V
G
1500
MAX
300
300
6.5
3.7
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
μA
nA
Ω

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APT50GT120B2RDLG Summary of contents

Page 1

TYPICAL PERFORMANCE CURVES Resonant Mode IGBT The Thunderbolt IGBT ® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT fers superior ruggedness and ultrafast switching speed. ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller") Charge gc Switching Safe Operating ...

Page 3

TYPICAL PERFORMANCE CURVES 150 V = 15V 25°C J 125 T = 55°C J 100 125° COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output ...

Page 4

V = 15V 800V 25°C or 125° 5Ω 100μ COLLECTOR TO EMITTER ...

Page 5

TYPICAL PERFORMANCE CURVES 4,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0. 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0. ...

Page 6

APT30DL120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) 90% Collector Voltage t f 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Defi nitions 10% t ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty Non-Repetitive Forward Surge Current (T FSM ...

Page 8

T = 125° 55° 25° 0 ANODE-TO-CATHODE VOLTAGE (V) F FIGURE 2, Forward Current vs. Forward Voltage 7000 T ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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