IRG4PSC71UD International Rectifier, IRG4PSC71UD Datasheet - Page 2

no-image

IRG4PSC71UD

Manufacturer Part Number
IRG4PSC71UD
Description
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Manufacturer
International Rectifier
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PSC71UDPBF
Manufacturer:
JRC
Quantity:
1 000
IRG4PSC71UD
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
During t
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
V
fe
E
V
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ies
oes
res
g
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/ T
b
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
––– 0.39 –––
––– 1.67
––– 1.95 –––
––– 1.71 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 3.26 –––
––– 2.27 –––
––– 5.53
–––
–––
–––
–––
–––
–––
––– 7500 –––
–––
–––
–––
–––
–––
–––
–––
––– 1084 1625
–––
–––
3.0
47
–––
–––
–––
–––
––– ±100
340
160
245
110
353
150
720
140
364
328
266
-13
1.4
1.3
7.1
8.2
70
44
90
94
91
88
13
93
82
13
–––
––– mV/°C V
–––
500
–––
520
240
–––
–––
368
167
–––
–––
–––
–––
–––
–––
–––
–––
120
210
546
–––
–––
2.0
6.0
1.7
7.2
13
66
12
20
V/°C
A/µs
mA
nA
µA
mJ
mJ
nC
nH
ns
nC
V
V
ns
ns
pF
A
V
S
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
J
GE
J
GE
GE
CC
J
J
J
J
J
J
J
J
= 60A
= 100A
= 60A, T
= 60A
= 60A, T
= 60A
= 60A, V
= 60A, V
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= V
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
C
See Fig.
See Fig.
Conditions
= 150°C
= 150°C
Conditions
= 250µA
= 10mA
See Fig.
See Fig.
G
G
= 250µA
= 1.5mA
= 60A
= 480V
= 480V
= 600V
= 600V, T
See Fig. 9, 10, 11, 18
= 5.0
= 5.0
14
15
16
17
See Fig. 8
See Fig. 7
www.irf.com
di/dt = 200A/µs
V
See Fig. 2, 5
See Fig. 13
I
V
F
J
GE
R
= 150°C
= 60A
= 200V
= 15V

Related parts for IRG4PSC71UD