SS10P3C Vishay, SS10P3C Datasheet

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SS10P3C

Manufacturer Part Number
SS10P3C
Description
Ss10p3c & Ss10p4c - High Current Density Surface Mount Schottky Barrier Rectifiers
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SS10P3CL-M3/86A
Quantity:
70 000
Company:
Part Number:
SS10P3CL-M3/86A
Quantity:
70 000
Document Number: 89035
Revision: 22-Nov-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load per diode
Non-repetitive avalanche energy at 25 °C, I
Operating junction and storage temperature range
V
F
T
at I
V
I
J
I
F(AV)
E
FSM
RRM
max.
AS
F
= 5 A
K
Cathode
TO-277A (SMPC)
eSMP
K
TM
High Current Density Surface Mount
Series
Anode 1
Anode 2
A
= 25 °C unless otherwise noted)
2
Schottky Barrier Rectifiers
AS
1
30 V, 40 V
2 x 5 A
150 °C
0.37 V
20 mJ
200 A
= 2 A per diode
total device
per diode
FEATURES
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
protection applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
SYMBOL
T
V
J,
I
I
F(AV)
E
FSM
RRM
T
AS
STG
Vishay General Semiconductor
dc-to-dc
SS10P3C & SS10P4C
SS10P3C
S103C
30
- 55 to + 150
converters,
200
5.0
10
20
SS10P4C
S104C
40
and
www.vishay.com
UNIT
mJ
°C
polarity
V
A
A
1

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SS10P3C Summary of contents

Page 1

... E3 suffix for commercial grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test SYMBOL V total device I per diode = 2 A per diode SS10P3C & SS10P4C Vishay General Semiconductor dc-to-dc converters, and SS10P3C SS10P4C S103C S104C 30 40 RRM 10 F(AV) 5 ...

Page 2

... SS10P3C & SS10P4C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Instantaneous forward voltage per diode (1) Reverse current per diode Typical junction capacitance per diode Note: (1) Pulse test: 300 µs pulse width duty cycle THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode Note: (1) Units mounted on recommended P ...

Page 3

... Figure 5. Typical Junction Capacitance Per Diode 100 100 0.01 Figure 6. Typical Transient Thermal Impedance Per Diode SS10P3C & SS10P4C Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 Reverse Voltage (V) Junction to Ambient 0 Pulse Duration (s) www ...

Page 4

... SS10P3C & SS10P4C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM. 0.049 (1.24) 0.037 (0.94) 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) www.vishay.com 4 0.187 (4.75) 0.175 (4.45) K 0.026 (0.65) NOM 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.268 (6.80) 0.030 (0.75) NOM. ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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