OPE5687HP Roithner LaserTechnik GmbH, OPE5687HP Datasheet

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OPE5687HP

Manufacturer Part Number
OPE5687HP
Description
High Speed Gaalas Infrared Emitter
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
High Speed GaAlAs Infrared Emitter
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
• Ultra high-speed : 25ns rise time
• 880nm wavelength
• Wide beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
MAXIMUM RATINGS
*1
*2
ELECTRO-OPTICALCHARACTERISTICS
The OPE5687HP is GaAlAs infrared emitting diode
for this device.
Forward voltage
Reverse current
Capacitance
Radiant intensity
Power
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Optical rise & fall time(10%~90%)
Cut off frequency
Power Dissipation
Forward current
Pulse forward current
Reverse voltage
Operating temp.
Soldering temp.
.Duty ratio = 1/100, pulse width=0.1ms.
.Lead Soldering Temperature (2mm from case for 5sec.).
Otherwise, it should be keeping in a damp proof box with desiccants.
Item
Item
*2
*1
*3
Symbol
Topr.
Tsol.
V
P
I
I
FP
F
D
R
OPE5687HP
Symbol
∆θ
tr/tf
∆λ
V
Po
Ct
I
Ie
λ
fc
R
p
F
-25~ +85
Rating
260.
150
100
1.0
4.0
I
+10mA p-p
F
Conditions
I
(Ta=25°C )
=50mA DC
DIMENSIONS (Unit : mm)
I
I
I
F
F
F
F
I
I
I
V
f=1MHz
=100mA
=50mA
=50mA
=50mA
F
F
F
=50
=50
=50
R
=4V
Unit
mW
mA
°C
°C
(Ta=25°C)
A
V
2-□0.5
Min.
25
20
Tolerance : ±0.2mm
25/15
Typ.
±22
880
1.5
20
50
35
45
14
Anode
Cathode
2.5
Max.
2.0
10
mW/
Unit
mW
deg.
µA
nm
nm
MHz
ns
V

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OPE5687HP Summary of contents

Page 1

... High Speed GaAlAs Infrared Emitter The OPE5687HP is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current. ...

Page 2

... AMBIENT TEMP 0.8 0.5 0.3 0.2 0.1 - 100 Ambient Temperature Ta( ) FORWARD CURRENT Vs. FORWARD VOLTAGE 100 Ta= 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Forward Voltage V (V) F OPE5687HP RADIANT INTENSITY Vs. FORWARD CURRENT. Ta=25 Ta=25 200 100 0.5 0.3 0 Forward Current IF(mA) RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. 1.0 I =50mA Ta=25 F 0.8 0.6 0.4 0.2 0.0 700 750 800 850 900 950 Emission Wavelength λ ...

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