CHIP6505 Roithner LaserTechnik GmbH, CHIP6505 Datasheet

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CHIP6505

Manufacturer Part Number
CHIP6505
Description
Visible Laser Diodes
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
CHIP 6505L
Structure: AlGaInP, index guided
Lasing wavelength: 650 nm typ.
Max. optical power: 5 mW
Chipsize: 300 x 300 x 102 µm [L x W x H] Tolerances +/- 5 µm
Cavity length: 300 µm +/- 5 µm
Emitting Point: about 2 µm down from top line
Gold coated on upper and lower side
Low threshold current, low operating current
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operation Temperature
Storage Temperature
Optical Output Power
Threshold Current
Operation Current
Operating Voltage
Lasing Wavelength
Beam Divergence
Beam Divergence
Astigmatism
CHARACTERISTIC SYMBOL TEST CONDITION MIN
Maximum Ratings (Tc=25°C)
Optical-Electrical Characteristics (Tc = 25°C)
Visible Wavelength Laserdiodechip
CHARACTERISTIC
ROITHNER LASERTECHNIK
ROITHNER LASERTECHNIK
e-mail: rlt@mcb.at
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
A-1040 WIEN, FLEISCHMANNGASSE 9
V
P
I
A
I
op
th
op
//
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s
TECHNICAL DATA
SYMBOL
P
V
V
o
T
R(PD)
T
P
R(LD)
=5mW, NA=0.4
STG
C
o
P
P
P
P
P
kink free
http://www.roithner.mcb.at
o
o
o
o
o
=5mW
=5mW
=5mW
=5mW
=5mW
-10 .. +40
-40 .. +85
RATING
30
640
5
2
Orientation
of linear
polarized
laserbeam
24
Laserchip
5
TYP
650
2.2
40
50
28
10
8
MAX UNIT
665
3.0
70
80
12
35
5
UNIT
mW
°C
°C
V
V
mW
mA
mA
µm
nm
V
°
°
//

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