NSB1010XV5 ON Semiconductor, NSB1010XV5 Datasheet

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NSB1010XV5

Manufacturer Part Number
NSB1010XV5
Description
Npn Transistor And Pnp Transistor Silicon Surface Mount Transistors With Monolithic Bias Resistor Network
Manufacturer
ON Semiconductor
Datasheet
NSB1010XV5T5
Dual Common
Base−Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSB1010XV5T5, two
complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
MAXIMUM RATINGS
and Q
 Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 0
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
Thermal Resistance
Total Device Dissipation
Thermal Resistance
Junction and Storage Temperature
The BRT (Bias Resistor Transistor) contains a single transistor with
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch Tape and Reel
This device is manufactured with a Pb−Free external lead finish only.
2
(Both Junctions Heated)
, − minus sign for Q
(One Junction Heated)
T
Derate above 25°C
Junction-to-Ambient
T
Derate above 25°C
Junction-to-Ambient
Characteristic
Characteristic
A
A
= 25°C
= 25°C
Rating
(T
A
1
(PNP) omitted)
= 25°C unless otherwise noted, common for Q
Preferred Device
Symbol
Symbol
Symbol
T
V
V
R
R
J
P
P
, T
CBO
CEO
I
qJA
qJA
C
D
D
stg
357 (Note 1)
350 (Note 1)
500 (Note 1)
250 (Note 1)
2.9 (Note 1)
4.0 (Note 1)
−55 to +150
Value
Max
Max
100
50
50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Unit
Vdc
Vdc
mW
mW
°C
1
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
NSB1010XV5T5
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
CASE 463B
Device
5
SOT−553
US = Specific Device Code
D
Q1
ORDERING INFORMATION
= Date Code
3
4
1
http://onsemi.com
R1
R2
(Pb−Free)
SOT−553
Package
Publication Order Number:
2
R1
R2
MARKING
DIAGRAM
8000/Tape & Reel
1
5
NSB1010XV5/D
US D
2 mm pitch
Shipping
Q2
1
5

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NSB1010XV5 Summary of contents

Page 1

... The BRT eliminates these individual components by integrating them into a single device. In the NSB1010XV5T5, two complementary BRT devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space premium. • ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (V = − Collector-Emitter Cutoff Current (V = − Emitter-Base Cutoff Current (V = −6 Collector-Base Breakdown Voltage (I = ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS — PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR −25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 5

... SOLDERING FOOTPRINT* 1.35 0.0531 0.0197 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com SOT−553 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982 CONTROLLING DIMENSION: MILLIMETERS 3 ...

Page 6

... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NSB1010XV5/D ...

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