IRF7503 International Rectifier Corp., IRF7503 Datasheet

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IRF7503

Manufacturer Part Number
IRF7503
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

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IRF7503
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Description
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Thermal Resistance
R
I
I
I
P
V
dv/dt
T
D
D
DM
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
J,
D
GS
JA
@ T
@ T
T
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
@T
STG
A
A
A
= 25°C
= 70°C
= 25°C
Maximum Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G 2
G 1
S 2
S 1
1
2
3
4
T o p V iew
Typ.
–––
-55 to + 150
8
7
6
5
HEXFET
1.25
Max.
± 20
Micro8
2.4
1.9
5.0
10
14
D 1
D 1
D 2
D 2
R
Max.
®
100
IRF7503
DS(on)
Power MOSFET
V
DSS
PD - 9.1266G
= 0.135
= 30V
Units
mW/°C
Units
V/ns
°C/W
°C
A
W
V
8/25/97

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IRF7503 Summary of contents

Page 1

... All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . iew @ 10V GS @ 10V GS Typ. ––– 9.1266G IRF7503 ® HEXFET Power MOSFET 30V DSS 0.135 D 2 DS(on) Micro8 Max ...

Page 2

... IRF7503 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics 3 IRF7503 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT OM 3. µ LSE W IDTH 0° ...

Page 4

... IRF7503 Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 150 ° 5°C ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient R G 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7503 D.U. µ d(on) r d(off ...

Page 6

... IRF7503 D.U Reverse Recovery Current Re-Applied Voltage Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled by R Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Driver Gate Drive Period P ...

Page 7

... ( IRF7503 ...

Page 8

... IRF7503 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & LLIN G DIMEN SIO N : MILLIME T ER. ...

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