SI2301ADS Vishay, SI2301ADS Datasheet

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... Top View Si2301DS (1A)* *Marking Code = 25_C UNLESS OTHERWISE NOTED) A Symbol T = 25_C 70_C 25_C 70_C A T Symbol R Si2301ADS Vishay Siliconix 5 sec Steady State V – "8 GS –2.0 –1. –1.6 –1.4 I – –0.75 –0.6 S 0.9 0 0.57 ...

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... Si2301ADS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance ...

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... Q – Total Gate Charge (nC) g Document Number: 71835 S-20617—Rev. B, 29-Apr-02 New Product Si2301ADS Vishay Siliconix Transfer Characteristics –55_C C 8 25_C 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Capacitance 800 600 ...

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... Si2301ADS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 0.1 0.01 0.001 0 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.3 0 250 mA D 0.1 0.0 –0.1 –0.2 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...