SI4409DY Vishay, SI4409DY Datasheet
SI4409DY
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SI4409DY Summary of contents
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... Top View Ordering Information: Si4409DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...
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... Si4409DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 70485 S-71276–Rev. A, 02-Jul-07 New Product 25 °C, unless otherwise noted = 10 thru 500 400 300 = 6 V 200 = 10 V 100 1.2 1.6 2 Si4409DY Vishay Siliconix 1.6 1.4 1.2 1.0 0.8 0.6 0 ° °C 0 0.0 0.0 1.2 2.4 3 Gate-to-Source Voltage (V) GS ...
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... Si4409DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.3 1.0 0 250 µA D 0.4 0.1 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 3.0 2.5 2 °C 1.5 J 1.0 0.5 0.0 0.8 1.0 1.2 100 100 125 150 ...
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... T - Case Temperature (°C) C Current Derating* 1.6 1.3 1.0 0.6 0.3 0 100 125 150 0 = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4409DY Vishay Siliconix 125 150 100 125 T - Case Temperature (°C) C Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...
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... Si4409DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...