SUM110P06-07L Vishay, SUM110P06-07L Datasheet

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SUM110P06-07L

Manufacturer Part Number
SUM110P06-07L
Description
P-channel 60-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Duty cycle ≤ 1 %.
b. When Mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72439
S-80274-Rev. C, 11-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
V
J
DS
= 175 °C)
- 60
(V)
Ordering Information: SUM110P06-07L
G
Top View
TO-263
0.0088 at V
0.0069 at V
D
d
S
r
DS(on)
SUM110P06-07L-E3 (Lead (Pb)-free)
P-Channel 60-V (D-S) 175 °C MOSFET
a
GS
GS
(Ω)
= - 4.5 V
= - 10 V
C
= 25 °C, unless otherwise noted
I
D
- 110
- 110
(A)
d
PCB Mount
T
T
L = 0.1 mH
T
T
C
A
C
C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• Package with Low Thermal Resistance
b
b
G
P-Channel MOSFET
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
AS
thJA
thJC
GS
DS
AS
D
D
S
D
®
stg
Power MOSFET
- 55 to 175
SUM110P06-07L
Typical
Limit
- 110
- 240
375
± 20
3.75
- 60
- 95
- 75
281
0.4
40
c
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
RoHS*
mJ
COMPLIANT
°C
W
V
A
Available
1

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SUM110P06-07L Summary of contents

Page 1

... DS DS(on) 0.0069 0.0088 4 TO-263 Top View Ordering Information: SUM110P06-07L SUM110P06-07L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage d Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Pulse Avalanche Energy Power Dissipation ...

Page 2

... SUM110P06-07L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... °C C 0.014 25 °C 0.012 0.010 125 °C 0.008 0.006 0.004 0.002 0.000 iss SUM110P06-07L Vishay Siliconix 200 160 120 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SUM110P06-07L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com 4 100 125 ...

Page 5

... Document Number: 72439 S-80274-Rev. C, 11-Feb-08 1000 100 10 1 0.1 0.1 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110P06-07L Vishay Siliconix Limited on °C C Single Pulse Drain-to-Source Voltage ( minimum V at which r ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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