BB101M Renesas Electronics Corporation., BB101M Datasheet

no-image

BB101M

Manufacturer Part Number
BB101M
Description
Build In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BB101M
Manufacturer:
MAXIM
Quantity:
2 051
Features
Outline
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
MPAK-4
Build in Biasing Circuit MOS FET IC
3
UHF RF Amplifier
2
BB101M
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-504
1st. Edition

Related parts for BB101M

BB101M Summary of contents

Page 1

... Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise characteristics; (NF = 2.0 dB typ 900 MHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 200 pF conditions. Outline MPAK-4 3 BB101M UHF RF Amplifier Source 4 2. Gate1 3. Gate2 4 ...

Page 2

... BB101M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature 2 Symbol Ratings G1S – G2S Pch 150 Tch 150 Tstg – ...

Page 3

... R 1.2 1.7 2 0.7 1.1 1 G2S — 0.012 0. MHz 16 20 — G2S — 2.0 3 BB101M = 200 G2S = + G2S = 100 G1S = 100 ...

Page 4

... BB101M Main Characteristics Test Circuit for Operating Items ( Gate AGC Input |yfs|, Ciss, Coss, Crss, NF, PG) D(op Gate 1 Drain Source Application Circuit 0 BBFET Output ...

Page 5

... Gate2 to Source Voltage V G2S Typical Output Characteristics G2S 200 1 2 Drain to Source Voltage V Drain Current vs. Gate1 Voltage 150 (V) Gate1 Voltage V BB101M ( G2S ( ...

Page 6

... BB101M Drain Current vs.Gate1 Voltege 220 G2S Gate1 Voltage V G1 Forward Transfer Admittance vs. Gate1 Voltage 150 kHz G2S Gate1 Voltage Drain Current vs.Gate1 Voltege ...

Page 7

... G2S f = 900 MHz 0 50 100 200 500 1000 2000 5 Gate Resistance R Power Gain vs. Drain Current G2S variable 900 MHz 0 5000 Drain Current I BB101M 5000 ( (mA ...

Page 8

... BB101M Noise Figure vs. Drain Current G2S R = variable 900 MHz Drain Current I (mA) D Gain Reduction vs. Gate2 to Source Voltage G2S 220 900 MHz Gate2 to Source Voltage V 8 Drain Current vs ...

Page 9

... Output Capacitance vs. Gate2 to Source Voltage 220 MHz Gate2 to Source Voltage V (V) G2S BB101M 5 9 ...

Page 10

... BB101M Package Dimentions + 0.3 2.8 – 0.1 1.9 0.95 0.95 + 0.1 0.4 0.4 – 0. 0.1 + 0.1 0.4 0.6 – 0.05 – 0.05 0.95 0.85 1 0.1 0.16 – 0.06 + 0.1 – 0. 0.1 Hitachi Code Unit: mm MPAK–4 EIAJ SC–61AA — JEDEC ...

Page 11

Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...

Related keywords