NTHD4N02F ON Semiconductor, NTHD4N02F Datasheet - Page 4

• Manufacturer Part Number: NTHD4N02F
• Description: Power Mosfet And Schottky Diode
• Manufacturer: ON Semiconductor

100
400
300
200
100
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
1
0
10
1
C
C
V
I
V
D
Figure 9. Resistive Switching Time Variation
ISS
RSS
DD
GS
= 2.9 A
= 16 V
= 4.5 V
V
DS
t
5
t
f
Figure 7. Capacitance Variation
d(off)
t
r
= 0 V
TYPICAL MOSFET PERFORMANCE CURVES
R
V
G
GS
, GATE RESISTANCE (W)
vs. Gate Resistance
0
V
V
DS
GS
= 0 V
10
5
t
d(on)
10
T
J
15
= 25°C
C
http://onsemi.com
OSS
NTHD4N02F
20
100
4
4.5
3.5
2.5
1.5
0.5
5
4
3
2
1
0
0
6
5
4
3
7
2
1
0
0.3
Q
Drain−to−Source Voltage vs. Total Charge
GS
Figure 10. Diode Forward Voltage vs. Current
V
T
(T
J
0.5
GS
= 25°C
J
Figure 8. Gate−to−Source and
= 0 V
0.45
V
= 25°C unless otherwise noted)
Q
SD
G
, TOTAL GATE CHARGE (nC)
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
1
GD
0.6
Q
T
1.5
0.75
2
0.9
I
T
D
J
= 2.9 A
= 25°C
2.5
1.05
3
20
16
12
8
4
0
1.2