RHP030N03 ROHM Co. Ltd., RHP030N03 Datasheet - Page 2

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RHP030N03

Manufacturer Part Number
RHP030N03
Description
4v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Electrical characteristics (Ta=25°C)
Parameter
charge
charge
V
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
iss
rss
r
gd
fs
f
gs
g
Min.
1.0
2.0
30
Typ.
160
160
4.5
6.5
1.0
1.5
90
90
27
11
15
7
Max.
±10
120
210
2.5
1
Unit
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
I
V
V
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
V
I
D
D
D
D
D
GS
DS
DS
DS
DS
GS
DD
GS
L
G
DD
GS
= 1mA, V
= 3A, V
= 3A, V
= 1.5A
= 3A
=10Ω
=10Ω
= 30V, V
= 10V, I
= 10V, I
= 10V
=±20V, V
=0V
= 10V
= 10V
15V
15 V
GS
GS
Conditions
GS
D
= 10V
= 4V
D
GS
= 1mA
= 3A
DS
=0V
=0V
=0V
RHP030N03
Rev.A
2/3

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