PH868C12 Fuji Electric holdings CO.,Ltd, PH868C12 Datasheet - Page 2

• Manufacturer Part Number: PH868C12
• Description: High Voltage Schottky Barrier Diode
• Manufacturer: Fuji Electric holdings CO.,Ltd

(120V / 30A )
Characteristics
0.01
150
140
130
120
110
100
0.1
10
22
20
18
16
14
12
10
1
8
6
4
2
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
0
Io:Output current of center-tap full wave connection
Square wave
Square wave
:Conduction angle of forward current for each rectifier element
Square wave
Sine wave
Forward Power Dissipation (max.)
Forward Characteristic (typ.)
5
2
Current Derating (Io-Tc) (max.)
I o
I o
360°
360°
Io
10
Io
V F
4
Average Output Current
Average Forward Current
=180°
=180°
=120°
=60°
DC
VR=60V
15
6
Forward Voltage
20
8
25
10
30
12
Square wave
Square wave
DC
Square wave
Sine wave
Tj=125°C
(V)
Tj=150°C
Tj=25°C
Tj=100°C
Per 1element
35
14
(A)
(A)
40
16
=180°
=180°
=120°
=60°
45
18
1000
10
10
10
10
10
100
10
-1
-2
-3
1
0
8
6
4
2
0
Junction Capacitance Characteristic (max.)
0
0
1
Reverse Power Dissipation (max.)
10 20 30 40
Reverse Characteristic (typ.)
V
R
V R
20
V R
360°
VR
Reverse Voltage
PH868C12 (30A)
40
Reverse Voltage
10
Reverse Voltage (V)
50 60 70 80
60
80
(V)
100
90 100 110 120 130
Tj=150°C
(V)
100
Tj= 25°C
Tj=100°C
Tj=125°C
DC
120
=180°
1000