VN2224 Supertex, Inc., VN2224 Datasheet
VN2224
Related parts for VN2224
VN2224 Summary of contents
Page 1
... Distance of 1.6mm from case for 10 seconds. N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex VN2224 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi ...
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... V = 25V 350 V = 0V, GS 150 25V 1.0MHz 25V 2.0A 10Ω GEN PULSE OUTPUT R GEN D.U.T. INPUT VN2224 I DRM (A) 5.0 = 5.0mA = 5.0mA = Max Rating 25V DS = 25V = 2.0A = 2.0A = 2.0A = 2.0A = 1.0A = 100mA ...
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... Saturation Characteristics 10V (volts) DS Power Dissipation vs. Case Temperature 10 5 TO- 100 125 T (°C) C Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-92 0 25° 0.001 0.01 0 (seconds) p VN2224 8V 10 150 10 ...
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... RSS On-Resistance vs. Drain Current 10V (amperes and R Variation with Temperature (th 5mA R @ 10V 100 Ο j Gate Drive Dynamic Characteristics V = 10V 40V DS 733 pF 300 (nanocoulombs) G VN2224 10 2.4 2.0 1.6 1.2 0.8 0.4 150 10 ...
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... NOM - (inches) MAX .210 Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D061608. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VN2224 A070108 ...