NDD03N60Z ON Semiconductor, NDD03N60Z Datasheet - Page 5

• Manufacturer Part Number: NDD03N60Z
• Description: Power Mosfet 600v 2.6a 3.6 Ohm Single N-channel Dpak
• Manufacturer: ON Semiconductor

0.01
100
0.1
0.01
0.01
10
100
0.1
0.1
1
10
1E−06
10
1E−06
0.1
1
1
V
SINGLE PULSE
T
50% (DUTY CYCLE)
2.0%
1.0%
Figure 12. Maximum Rated Forward Biased
1.0%
5.0%
50% (DUTY CYCLE)
20%
10%
2.0%
5.0%
C
GS
20%
10%
= 25°C
v 30 V
SINGLE PULSE
V
SINGLE PULSE
Safe Operating Area NDD03N60Z
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1E−05
1E−05
1
Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD03N60Z
Figure 14. Thermal Impedance (Junction−to−Case) for NDD03N60Z
1E−04
1E−04
10 ms
10
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
1 ms
100 ms
dc
LIMIT
1E−03
1E−03
TYPICAL CHARACTERISTICS
100
10 ms
http://onsemi.com
1E−02
1E−02
PULSE TIME (s)
PULSE TIME (s)
1000
5
0.01
100
0.1
10
1
1E−01
1E−01
0.1
V
SINGLE PULSE
T
Figure 13. Maximum Rated Forward Biased
C
GS
= 25°C
v 30 V
V
Safe Operating Area NDF03N60Z
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1E+00
1E+00
1
1E+01
dc
1E+01
10 ms
10
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
1 ms
LIMIT
R
Steady State
100 ms
R
Steady State
qJA
1E+02
1E+02
qJA
100
= 40°C/W
= 2°C/W
10 ms
1E+03
1E+03
1000