FMA18N25G Fuji Electric holdings CO.,Ltd, FMA18N25G Datasheet - Page 17
FMA18N25G
Manufacturer Part Number
FMA18N25G
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.FMA18N25G.pdf
(19 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Fuji Electric Device Technology Co.,Ltd.
10
10
10
10
0.1
10
1
3
2
1
0
0.00
10
-1
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
0.25
10
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
0.50
0
s pulse test,Tch=25
VSD [V]
VDS [V]
0.75
10
1
1.00
MS5F06392
C
1.25
10
2
Ciss
Coss
Crss
1.50
17 / 19
H04-004-03