BUW13F NXP Semiconductors, BUW13F Datasheet - Page 5
BUW13F
Manufacturer Part Number
BUW13F
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.BUW13F.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
handbook, halfpage
t
SYMBOL
f
Silicon diffused power transistors
P tot max
(%)
120
80
40
0
0
fall time
Fig.2 Power derating curve.
BUW13F
BUW13AF
50
PARAMETER
100
T h (
o
MGK674
C)
150
I
V
I
V
Con
Con
CL
CL
= 10 A; I
= 250 V; T
= 8 A; I
= 300 V; T
CONDITIONS
5
B
B
handbook, halfpage
= 1.6 A;
= 2 A;
c
c
T
c
= 100 C
= 100 C
(A)
I C
100 C; V
20
10
0
0
BE
Fig.3 Reverse bias SOAR.
= 1 to 5 V.
MIN.
400
BUW13F; BUW13AF
200
200
TYP.
800
Product specification
300
300
V CE (V)
MAX.
BUW13F
BUW13AF
MGB896
1200
ns
ns
UNIT