BUW12AW NXP Semiconductors, BUW12AW Datasheet - Page 3
BUW12AW
Manufacturer Part Number
BUW12AW
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.BUW12AW.pdf
(12 pages)
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
1997 Aug 14
V
V
I
I
I
I
P
T
T
V
V
V
I
I
h
SYMBOL
SYMBOL
C
CM
B
BM
j
CES
EBO
FE
stg
j
CESM
CEO
tot
= 25 C unless otherwise specified.
CEOsust
CEsat
BEsat
Silicon diffused power transistors
collector-emitter peak voltage
collector-emitter voltage
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
collector-emitter sustaining voltage I
collector-emitter saturation voltage
base-emitter saturation voltage
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
BUW12W
BUW12AW
BUW12W
BUW12AW
BUW12W
BUW12AW
BUW12W
BUW12AW
BUW12W
BUW12AW
PARAMETER
PARAMETER
V
open base
see Figs 2 and 4
t
t
T
L = 25 mH; see Figs 5 and 6
I
see Figs 7 and 9
I
see Figs 7 and 9
I
I
V
note 1
V
T
V
V
see Fig.10
V
p
p
C
C
C
C
C
mb
j
BE
CE
CE
EB
CE
CE
< 2 ms; see Fig.2
= 125 C; note 1
= 100 mA; I
= 6 A; I
= 5 A; I
= 6 A; I
= 5 A; I
2 ms
= 0
= V
= V
= 9 V; I
= 5 V; I
= 5 V; I
25 C; see Fig.3
CESMmax
CESMmax
CONDITIONS
CONDITIONS
2
B
B
B
B
= 1.2 A;
= 1 A;
= 1.2 A; see Fig.7
= 1 A; see Fig.7
C
C
C
= 0
= 10 mA;
= 1 A; see Fig.10
Boff
; V
; V
= 0;
BE
BE
= 0;
= 0;
BUW12W; BUW12AW
400
450
10
10
MIN.
65
MIN.
18
20
TYP.
850
1000
400
450
8
20
4
6
125
+150
150
MAX.
Product specification
1.5
1.5
1.5
1.5
1
3
10
35
35
MAX.
V
V
V
V
A
A
A
A
W
C
C
UNIT
V
V
V
V
V
V
mA
mA
mA
UNIT