BUW12AW NXP Semiconductors, BUW12AW Datasheet - Page 7
BUW12AW
Manufacturer Part Number
BUW12AW
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.BUW12AW.pdf
(12 pages)
Philips Semiconductors
1997 Aug 14
handbook, full pagewidth
handbook, full pagewidth
Silicon diffused power transistors
V BEsat
V CEsat
I
T
(1) I
C
V BE
j
/I
(V)
(V)
= 25 C.
B
Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
1.6
1.4
1.2
1.0
0.8
2.0
1.5
1.0
0.5
= 5.
C
0
10
= 8 A.
0
1
(1) V
(2) V
(2) I
(3) I
BE
BE
; T
; T
C
C
j
j
Fig.8 Base-emitter voltage as a function of base current; typical values.
= 6 A.
= 3 A.
= 25 C.
= 100 C.
0.5
(3) V
(4) V
CE
CE
1
1
; T
; T
j
j
= 100 C.
= 25 C.
(1)
(2)
(3)
(4)
(1)
(2)
(3)
1.5
6
10
2
BUW12W; BUW12AW
2.5
I C (A)
Product specification
I B (A)
MGB911
MGB914
10
3
2