SQM110N04-03L Vishay, SQM110N04-03L Datasheet - Page 4

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SQM110N04-03L

Manufacturer Part Number
SQM110N04-03L
Description
N-channel 40 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet
SQM110N04-03L
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
2.0
1.6
1.2
0.8
0.4
0.0
- 50 - 25
On-Resistance vs. Junction Temperature
V
I
D
GS
= 30 A
= 10 V
0
T
J
- Junction Temperature (°C)
25
50
75
100
50
48
46
44
42
40
Drain Source Breakdown vs. Junction Temperature
A
- 50 - 25
125
= 25 °C, unless otherwise noted
I
150
D
= 1 mA
T
0
175
J
- Junction Temperature (°C)
25
50
75
100
100
10
1
125
0
150
Source Drain Diode Forward Voltage
175
T
V
J
0.3
SD
= 150 °C
- Source-to-Drain Voltage (V)
0.6
S09-0966-Rev. A, 01-Jun-09
Document Number: 64719
T
J
0.9
= 25 °C
1.2

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