BB910 NXP Semiconductors, BB910 Datasheet - Page 2

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BB910

Manufacturer Part Number
BB910
Description
Vhf Variable Capacitance Diode
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
The BB910 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
hermetically sealed leaded glass
SOD68 (DO-34) package.
ELECTRICAL CHARACTERISTICS
T
Note
1. V
1996 May 03
I
r
C
SYMBOL
C
--------------------- -
--------- -
j
R
C
s
= 25 C; unless otherwise specified.
C
Excellent linearity
Matched to 2.5%
Hermetically sealed leaded glass
SOD68 (DO-34) package
C28: 2.5; ratio: 16
Low series resistance.
Electronic tuning in VHF television
tuners, band B up to 460 MHz
VCO.
VHF variable capacitance diode
d
C
d 0.5V
d 28V
d
d
R
is the value at which C
reverse current
diode series resistance
diode capacitance
capacitance ratio
capacitance matching
PARAMETER
d
= 40 pF.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
V
V
f = 100 MHz; note 1
V
V
f = 1 MHz
V
V
I
T
T
SYMBOL
F
R
R
R
R
R
stg
j
R
Cathode side indicated by a red band on a black body.
Additional green band.
= 28 V; see Fig.3
= 28 V; T
= 0.5 V; f = 1 MHz; see Figs 2 and 4
= 28 V; f = 1 MHz; see Figs 2 and 4
= 0.5 to 28 V
handbook, halfpage
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
continuous reverse voltage
continuous forward current
storage temperature
operating junction temperature
j
= 85 C; see Fig.3
CONDITIONS
2
PARAMETER
k
38
2.3
14
55
55
MIN.
MIN.
a
Product specification
TYP.
30
20
+150
+100
MAX.
MAM234
10
200
1
2.7
2.5
MAX.
BB910
V
mA
C
C
UNIT
nA
nA
pF
pF
%
UNIT

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