IRK.F102 International Rectifier, IRK.F102 Datasheet - Page 8

• Manufacturer Part Number: IRK.F102
• Description: FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
• Manufacturer: International Rectifier

1E4
1E3
1E2
1E1
1E4
1E3
1E2
IRK.F102.. Series
Bulletin I27097 rev. A 09/97
8
1E1
1E1
tp
tp
5000
100
0.1
10
IRK.F102.. Series
Sinusoidal pulse
IRK.F102.. Series
Trapezoidal Pulse
T
1
0.01
C
0.05
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
VGD
= 60°C, di/dt 50A/µs
2500
1E2
1E2
0.1
<=30% rated di/dt : 10V, 20ohms
tr<=1 µs
Pulse Basewidth (µs)
rated di/dt : 20V, 10ohms; tr<=1 µs
Pulse Basewidth (µs)
0.25
IGD
1000
0.5
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
1
400
2.5
5
150
10 joules per pulse
0.1
1E3
1E3
50 Hz
Fig. 13 - Frequency Characteristics
Snubber circuit
R
C = 0.22 µF
V
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
s
s
D
= 47 ohms
= 80% V
(b)
IRK.F102.. Series
DRM
1E4 1E1
1E4 1E1
(a)
1E4
1E4
1
1E1
1E1
tp
Frequency Limited by PG(AV)
tp
5000
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
IRK.F102.. Series
Trapezoidal Pulse
di/dt 50A/µs
IRK.F102.. Series
Trapezoidal Pulse
T
C
0.05
= 60°C, di/dt 100A/µs
10
2500
1E2
1E2
0.1
(1)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
0.25
0.5
1000
(2)
1
2.5
400
(3)
5
10 joules per pulse
(4)
150
1E3
1E3
100
Snubber circuit
R
C = 0.22 µF
V
www.irf.com
50 Hz
s
s
D
= 47 ohms
= 80% V
DRM
1E4
1E4