STGP10HF60KD ST Microelectronics, STGP10HF60KD Datasheet - Page 3

• Manufacturer Part Number: STGP10HF60KD
• Description: Short-circuit Rugged IGBT
• Manufacturer: ST Microelectronics

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STGx10HF60KD
1
Table 2.
1.
2. Vclamp = 80% of V
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
Symbol
R
R
R
I
I
V
P
CP
V
thj-case
thj-case
CL
I
thj-amb
I
I
V
t
FSM
C
C
scw
Calculated according to the iterative formula:
CES
I
TOT
T
ISO
GE
(1)
(1)
F
j
(2)
(3)
Collector-emitter voltage (V
Collector current (continuous) at T
Collector current (continuous) at T
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Diode RMS forward current at T
Surge non repetitive forward current t
sinusoidal
Isolations withstand voltage (RMS) from all three
leads to external heat sink ( t=1 s; T
Total dissipation at T
Short-circuit withstand time, V
T
Operating junction temperature
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
C
Electrical ratings
Absolute maximum ratings
Thermal data
= 125 °C, R
CES
, T
j
G
=175 °C, R
= 10 Ω, V
I
C
Parameter
C
Parameter
= 25 °C
(
T
C
G
)
=10 Ω, V
GE
GE
=
CE
= 12 V
= 0)
--------------------------------------------------------------------------------------------------------- -
R
C
thj c
= 0.5V
= 25 °C
C
C
GE
–
C
= 25 °C
= 100 °C
Doc ID 16136 Rev 1
=15 V
p
×
= 25 °C)
= 10 ms
(BR)CES
V
CE sat
(
T
j max
(
,
) max
(
)
–
)
(
T
T
C
j max
(
TO-220
TO-220
D
D
62.5
2
2
1.8
PAK
PAK
)
4
,
I
C
(
T
20
10
80
C
-
)
– 40 to 175
)
Value
Value
TBD
TBD
DPAK
600
±20
DPAK
10
20
5
100
1.9
4.5
Electrical ratings
TO-220FP
TO-220FP
2500
62.5
30
9
6
5
7
°C/W
°C/W
°C/W
Unit
Unit
°C
µs
W
V
A
A
A
A
V
A
A
V
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