BAS40-04thruBAS40-06 General Semiconductor, BAS40-04thruBAS40-06 Datasheet - Page 2

• Manufacturer Part Number: BAS40-04thruBAS40-06
• Description: Schottky Diodes
• Manufacturer: General Semiconductor

BAS40 thru BAS40-06
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
2
Electrical Characteristics
Parameter
Reverse Breakdown Voltage
Leakage Current
Forward Voltage
Capacitance
Reverse Recovery Time
Note:
(1) Device on fiberglass substrate, see layout.
Layout for R
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
thJA
test
(T
J
= 25°C unless otherwise noted)
Symbol
V
(BR)R
C
V
I
t
0.59 (15)
R
rr
tot
F
0.47 (12)
Pulse Test tp < 300 s
Pulse Test tp < 300 s
I
I
F
rr
I
R
= 10mA, I
= 1mA, R
Test Condition
0.03 (0.8)
= 10 A (pulsed)
0.2 (5)
I
V
f = 1MHz
I
F
V
F
R
R
= 40mA
= 1mA
= 30V
= 0V
R =
L
= 100
0.20 (5.1)
0.30 (7.5)
0.06 (1.5)
10mA
0.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
Dimensions in inches (millimeters)
Min
40
—
—
—
—
—
Typ
4.0
20
—
—
—
—
Document Number 88129
1000
Max
100
380
—
5
5
8-May-02
Unit
mV
mV
nA
pF
ns
V