Si7336DP Vishay Intertechnology, Si7336DP Datasheet - Page 3

• Manufacturer Part Number: Si7336DP
• Description: N-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 72415
S-32038—Rev. B, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.005
0.004
0.003
0.002
0.001
0.000
0.1
6
5
4
3
2
1
0
50
10
1
0
0
0.00
V
I
D
5
DS
Source-Drain Diode Forward Voltage
= 20 A
On-Resistance vs. Drain Current
0.2
10
= 15 V
V
Q
SD
T
10
g
J
= 150_C
− Total Gate Charge (nC)
− Source-to-Drain Voltage (V)
I
D
V
0.4
GS
15
− Drain Current (A)
Gate Charge
20
= 4.5 V
20
0.6
30
25
0.8
V
30
GS
T
40
J
= 10 V
= 25_C
1.0
35
New Product
50
40
1.2
0.015
0.012
0.009
0.006
0.003
0.000
7000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
−25
V
I
rss
D
GS
= 25 A
V
2
V
GS
= 10 V
6
DS
T
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
25
Capacitance
C
4
12
oss
I
D
Vishay Siliconix
C
= 25 A
50
iss
6
18
75
Si7336DP
100
www.vishay.com
8
24
125
10
150
30
3