Si7407DN Vishay Intertechnology, Si7407DN Datasheet - Page 2

• Manufacturer Part Number: Si7407DN
• Description: P-channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7407DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
25
20
15
10
5
0
0
b
Parameter
V
a
a
DS
1
V
Output Characteristics
GS
- Drain-to-Source Voltage (V)
a
= 5 thru 2 V
a
J
= 25_C UNLESS OTHERWISE NOTED)
2
Symbol
V
3
r
I
DS(on)
DS(on)
t
I
t
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
1 V
1.5 V
4
New Product
V
DS
I
V
D
DS
^ -1 A, V
= -6 V, V
I
V
V
V
F
= -9.6 V, V
V
V
V
GS
DS
GS
V
= -3.2 A, di/dt = 100 A/ms
I
DS
DS
V
DS
S
V
V
Test Condition
GS
DD
DD
DS
v -5 V, V
= -4.5 V, I
= -3.2 A, V
= -2.5 V, I
= V
= -6 V, I
= -9.6 V, V
= -1.8 V, I
= 0 V, V
= -6 V, R
= -6 V, R
GS
GEN
GS
GS
= -4.5 V, I
, I
= -4.5 V, R
D
D
= 0 V, T
GS
D
GS
D
= -400 mA
GS
= -15.6 A
D
L
L
GS
= -13.5 A
= -15.6 A
= -4.5 V
= 6 W
= 6 W
= "8 V
= -5 A
= 0 V
= 0 V
D
J
= -15.6 A
G
= 85_C
30
25
20
15
10
5
0
= 6 W
0.0
0.4
V
GS
-0.40
Min
Transfer Characteristics
-30
- Gate-to-Source Voltage (V)
25_C
T
C
0.8
= 125_C
0.009
0.013
0.019
Typ
-0.7
200
165
52
39
30
50
60
11
6
S-22122—Rev. B, 25-Nov-02
Document Number: 71912
1.2
-55 _C
"100
Max
0.012
0.016
0.024
-1.0
-1.2
300
250
-1
-5
59
45
75
90
1.6
Unit
nA
m
mA
nC
ns
V
A
W
S
V
2.0