Si7407DN Vishay Intertechnology, Si7407DN Datasheet - Page 3

• Manufacturer Part Number: Si7407DN
• Description: P-channel 12-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71912
S-22122—Rev. B, 25-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.04
0.03
0.02
0.01
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
V
= 15.6 A
0.2
On-Resistance vs. Drain Current
5
GS
= 6 V
9
V
= 1.8 V
SD
Q
T
g
J
I
= 150_C
- Source-to-Drain Voltage (V)
10
D
- Total Gate Charge (nC)
0.4
- Drain Current (A)
Gate Charge
18
15
0.6
27
20
0.8
T
J
= 25_C
V
V
GS
GS
36
= 2.5 V
= 4.5 V
25
1.0
45
30
1.2
New Product
5000
4000
3000
2000
1000
0.04
0.03
0.02
0.01
0.00
1.3
1.2
1.1
1.0
0.9
0.8
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
-25
D
V
I
D
GS
= 5 A
= 15.6 A
2
C
V
V
1
= 4.5 V
rss
GS
DS
T
J
0
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
4
25
Capacitance
2
I
C
D
oss
= 15.6 A
Vishay Siliconix
50
6
C
iss
3
75
Si7407DN
8
100
www.vishay.com
4
10
125
150
12
5
3