MCH5541-TL-E ON Semiconductor, MCH5541-TL-E Datasheet

MCH5541-TL-E

Manufacturer Part Number

MCH5541-TL-E

Description

Specifications: Transistor Type: NPN + PNP ; Voltage - Collector Emitter Breakdown (Max): 30V ; Current - Collector (Ic) (Max): 700mA ; Power - Max: 500mW ; DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V ; Vce Saturation (Max) @ Ib, Ic: 190mV

Manufacturer

ON Semiconductor

Datasheet

1.MCH5541-TL-E.pdf (5 pages)

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Ordering number : ENN8224

MCH5541

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : E1

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

•

MOSFET gate drivers, relay drivers, lamp drivers, motor drivers.

Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting.

Ultrasmall package permitting applied sets to be small and slim.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

( ) : PNP

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)CBO

V (BR)CEO

V (BR)EBO

V CE (sat)

V BE (sat)

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

PNP / NPN Epitaxial Planar Silicon Transistor

Push-Pull Circuit Applications

Tstg

h FE

Cob

I CP

P C

I C

f T

V CB =(--)30V, I E =0

V EB =(--)4V, I C =0

V CE =(--)2V, I C =(- -10)50mA

V CE =(--)2V, I C =(--)50mA

V CB =(--)10V, f=1MHz

I C =(--)200mA, I B =(--)10mA

I C =(--)10 A, I E =0

I C =(--)1mA, R BE =

I E =(--)10 A, I C =0

PW 10 s

Mounted on a ceramic board (600mm

MCH5541

Conditions

0.8m)

21005EA TS IM TB-00001171

(200)300

(--30)40

min

(- -)30

(--)5

Ratings

(520)540

(- -110)85 (--220)190

(4.7)3.3

typ

(--)0.9

Ratings

--55 to +150

Continued on next page.

(500)800

(--30)40

(--30)30

(--)700

max

(--)100

(--)1.2

(--)5

(--)3

150

0.5

No.8224-1/5

MHz

Unit

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