HA16114FP Renesas, HA16114FP Datasheet - Page 14
HA16114FP
Manufacturer Part Number
HA16114FP
Description
Switching Regulator
Manufacturer
Renesas
Datasheet
1.HA16114FP.pdf
(40 pages)
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HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
4. PWM Output Circuit and Power MOSFET Driving Method
These ICs have built-in totem-pole push-pull drive circuits that can drive a power MOS FET as shown in
figure 4.1. The power MOS FET can be driven directly through a gate protection resistor.
If V
taken, e.g. by adding Zener diodes as shown in figure 4.2.
To drive a bipolar power transistor, the base should be protected by voltage and current dividing resistors as
shown in figure 4.3.
Rev.1, Dec. 2000, page 12 of 38
IN
Totem-pole output circuit
exceeds the gate breakdown voltage of the power MOS FET additional protective measures should be
Figure 4.1 Connection of Output Stage to Power MOS FET
circuit
Bias
Figure 4.3 Driving a Bipolar Power Transistor
Figure 4.2 Gate Protection by Zener Diodes
GND
GND
OUT
OUT
Example: N-channel power MOSFET
P.GND
V
V
Base discharging resistor
V
IN
IN
IN
Example: NPN power transistor
Base current
limiting resistor
R
OUT
G
D
Gate protection
resistor
Z
R
To C
G
L
V
V
Example:
P-channel power MOSFET
O
O
V
O