MTSF3N03HD ON Semiconductor, MTSF3N03HD Datasheet - Page 2

• Manufacturer Part Number: MTSF3N03HD
• Description: Hdtmos Power MOSFETs, Micro8, Single N-channel, VDSS 30
• Manufacturer: ON Semiconductor

1. Repetitive rating; pulse width limited by maximum junction temperature.
MAXIMUM RATINGS
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 M )
Gate–to–Source Voltage – Continuous
1 SQ.
FR–4 or G–10 PCB
Figure 1 below
Steady State
Minimum
FR–4 or G–10 PCB
Figure 2 below
Steady State
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting T J = 25 C
(V DD = 30 Vdc, V GS = 5.0 Vdc, Peak I L = 9.0 Apk, L = 5.0 mH, R G = 25 W)
Figure 1. 1, Square FR–4 or G–10 PCB
(T J = 25 C unless otherwise noted)
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ T A = 25 C
Linear Derating Factor
Drain Current – Continuous @ T A = 25 C
Continuous @ T A = 70 C
Pulsed Drain Current (Note 1.)
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ T A = 25 C
Linear Derating Factor
Drain Current – Continuous @ T A = 25 C
Continuous @ T A = 70 C
Pulsed Drain Current (Note 1.)
Rating
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MTSF3N03HD
2
Figure 2. Minimum FR–4 or G–10 PCB
Symbol
T J , T stg
R THJA
R THJA
V DGR
V DSS
V GS
E AS
I DM
I DM
P D
P D
I D
I D
I D
I D
– 55 to 150
14.29
Max
1.79
0.78
6.25
160
200
5.7
4.5
3.8
3.0
30
30
70
45
30
20
mW/ C
mW/ C
Watts
Watts
Unit
C/W
C/W
mJ
V
V
V
A
A
A
A
A
A
C