HY29LV400 Hynix Semiconductor, HY29LV400 Datasheet - Page 27

• Manufacturer Part Number: HY29LV400
• Description: 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
• Manufacturer: Hynix Semiconductor

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AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Note: Refer to the Program/Erase Operations table for t
Rev. 1.0/Nov. 01
J
from word to
from byte to
E
word mode
byte mode
P
D
switching
switching
a
E
a r
BYTE#
BYTE#
C
m
t e
t
t
t
t
S
F
r e
E
F
E
B Y T E #
H
L
L
L
d t
Q
Q
F
F
DQ[15]/A-1
DQ[15]/A-1
H
L
Z
V
W E #
C E #
DQ[14:0]
DQ[14:0]
BYTE#
BYTE#
C
C
B
B
E
E
Y
Y
O E #
CE#
T
T
#
#
E
E
o t
o t
#
#
S
S
B
B
w
w
Y
Y
Figure 17. BYTE# Timings for Read Operations
Figure 18. BYTE# Timings for Write Operations
T
T
c t i
c t i
E
E
h
h
#
#
n i
n i
S
S
g
g
w
w
L
H
c t i
c t i
t
t
o
E L F H
E L F L
g i
w
h
h
D
h
n i
n i
o t
e
o t
g
g
s
O
c
L
H
O
i r
o
u
g i
u
p t
t p
w
p t
h
t u
o i
t u
H
n
A
t
AS
g i
S E T
i t c
and t
h
e v
Z -
t
(t
Address Input A-1
F L Q Z
A S
AH
)
Data Output DQ[7:0]
Output DQ[15]
specifications.
Data Output DQ[14:0]
t
F H Q V
Falling edge of the last WE# signal
t
M
M
M
M
H O L D
a
a
a
n i
x
x
x
(t
A H
Address Input A-1
Data Output DQ[7:0]
-
2
5
Data Output DQ[14:0]
)
5
5
5
Data Output DQ[15]
S
5
p
e
e
d
-
2
7
7
5
5
5
0
O
0
t p
HY29LV400
o i
n
-
3
9
9
0
0
0
U
s n
s n
s n
s n
n
27
t i