STB50NE10 ST Microelectronics, Inc., STB50NE10 Datasheet - Page 2

• Manufacturer Part Number: STB50NE10
• Description: N-channel 100V - 0.021 Ohm - 50A - D2PAK StripFET Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

STB50NE10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON
DYNAMIC
2/9
V
Rthj-case
Rthc-sink
Rthj-amb
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
(*)
g
I
I
DS(on)
C
GS(th)
C
E
C
GSS
I
DSS
fs
AR
T
oss
AS
rss
iss
l
(*)
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
max)
AR
Parameter
, V
case
DD
I
V
V
V
V
V
V
V
D
DS
DS
DS
GS
DS
GS
DS
= 50 V)
= 250 µA, V
= 25 °C unless otherwise specified)
>I
= Max Rating T
= 25V f = 1 MHz V
= Max Rating
= V
= ± 20V
= 10 V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
xR
DS(on)max
GS
I
D
= 0
I
D
= 25 A
C
= 250 A
= 125°C
I
D
GS
=25 A
Max
Max
Typ
= 0
Min.
Min.
Min.
100
20
2
Max Value
0.83
62.5
0.021
300
4350
300
0.5
Typ.
Typ.
Typ.
50
500
175
35
3
0.027
Max.
±100
Max.
Max.
6000
675
238
10
1
4
°C/W
°C/W
°C/W
Unit
mJ
°C
Unit
Unit
Unit
A
µA
µA
nA
pF
pF
pF
V
V
S