BT139X-500E Philips Semiconductors, BT139X-500E Datasheet - Page 2

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BT139X-500E

Manufacturer Part Number
BT139X-500E
Description
Triacs sensitive gate
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
September 1997
Triacs
sensitive gate
hs
SYMBOL
V
C
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
isol
T
GT
isol
th j-hs
th j-a
= 25 ˚C unless otherwise specified
D
/dt
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
PARAMETER
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform; gate open circuit
I
dI
T
TM
D
D
D
D
D
D
DM
G
= 20 A
/dt = 5 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 20 A; V
= 67% V
CONDITIONS
waveform;
R.H.
DRM(max)
T
GT
GT
T
D
T
DRM(max)
= 0.1 A
= 0.1 A
; T
65% ; clean and dustfree
= 0.1 A
= 0.1 A
= V
= 0.1 A; T
j
2
= 125 ˚C
DRM(max)
; T
j
= 125 ˚C;
j
; I
= 125 ˚C
G
= 0.1 A;
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
MIN.
MIN.
MIN.
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BT139X series E
TYP.
TYP.
TYP.
TYP.
10
2.5
4.0
5.0
3.2
4.0
5.5
4.0
1.2
0.7
0.4
0.1
55
11
16
50
2
-
-
Product specification
MAX.
2500
MAX.
MAX.
MAX.
4.0
5.5
1.6
1.5
0.5
10
10
10
25
30
40
30
40
30
-
-
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
UNIT
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
pF
V
V
V
V
s

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