IRF550 Fairchild Semiconductor, IRF550 Datasheet - Page 4

• Manufacturer Part Number: IRF550
• Description: Advanced Power MOSFET
• Manufacturer: Fairchild Semiconductor

IRF550A
10
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-1
3
2
1
0
-75
10
0
Fig 7. Breakdown Voltage vs. Temperature
-50
Fig 9. Max. Safe Operating Area
-25
Operation in This Area
is Limited by R
T
V
J
DS
, Junction Temperature [
0
, Drain-Source Voltage [V]
@ Notes :
10
10
1. T
2. T
3. Single Pulse
10
- 1
- 2
25
0
10
C
J
= 25
= 175
- 5
DS(on)
10
D=0.5
0.05
0.02
0.01
0.2
0.1
50
1
o
C
o
C
DC
75
10 ms
10
t
100
1
- 4
1 ms
single pulse
, Square Wave Pulse Duration
@ Notes :
125
100 s
1. V
2. I
o
C]
GS
D
150
= 250 A
= 0 V
Fig 11. Thermal Response
10
10
2
10 s
175
- 3
200
10
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig 10. Max. Drain Current vs. Case Temperature
50
40
30
20
10
0
-75
25
@ Notes :
10
1. Z
2. Duty Factor, D=t
3. T
P
-50
Fig 8. On-Resistance vs. Temperature
DM
- 1
J M
50
J C
-25
-T
(t)=0.9
T
[sec]
C
J
t
=P
T
1
, Junction Temperature [
0
c
t
D M
2
, Case Temperature [
10
75
*Z
25
o
0
C/W Max.
J C
(t)
50
1
/t
100
POWER MOSFET
2
75
N-CHANNEL
10
1
100
125
@ Notes :
o
125
C]
1. V
2. I
o
C]
GS
D
150
= 20.0 A
150
= 10 V
175
200
175