SI4862DY Vishay Siliconix, SI4862DY Datasheet
SI4862DY
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SI4862DY Summary of contents
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... D Low Gate Resistance D 100% R Tested G APPLICATIONS D Synchronous Rectification D Low Output Voltage Synchronous Rectification N-Channel MOSFET 10 secs Steady State 16 DS " 2.9 1.3 S 3 150 stg Typical Maximum Si4862DY Unit Unit _C/W www.vishay.com 1 ...
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... Si4862DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... Source-to-Drain Voltage (V) SD Document Number: 71439 S-03662—Rev. B, 14-Apr-03 New Product 25_C J 0.8 1.0 1.2 Si4862DY Vishay Siliconix Capacitance 10000 8000 C iss 6000 4000 C oss 2000 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si4862DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 = 250 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...