IDT71V2556S Integrated Device Technology, IDT71V2556S Datasheet - Page 19

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IDT71V2556S

Manufacturer Part Number
IDT71V2556S
Description
128k X 36, 256k X 18 3.3v Synchronous Zbt Srams 2.5v I/o, Burst Counter Pipelined Outputs
Manufacturer
Integrated Device Technology
Datasheet

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NOTES:
1. Q (A
) represents the first output from the external address A
. D (A
) represents the input data to the SRAM corresponding to address A
.
1
1
2
2
2. CE
timing transitions are identical but inverted to the CE
and CE
signals. For example, when CE
and CE
are LOW on this waveform, CE
is HIGH.
2
1
2
2
2
1
3. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two
cycles before the actual data is presented to the SRAM.

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