ZXTN2011G Zetex Semiconductors plc., ZXTN2011G Datasheet - Page 4

• Manufacturer Part Number: ZXTN2011G
• Description: 100v Npn Low Saturation Medium Power Low Saturation Transistor In Sot223
• Manufacturer: Zetex Semiconductors plc.

ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width
ZXTN2011G
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
S E M I C O N D U C T O R S
SYMBOL
BV
BV
BV
BV
I
I
R
I
V
V
V
H
f
C
t
t
CBO
CER
EBO
T
ON
OFF
amb
CE(SAT)
BE(SAT)
BE(ON)
FE
OBO
CBO
CER
CEO
EBO
1k
300 s; duty cycle
= 25°C unless otherwise stated)
4
MIN.
200
200
100
100
100
30
10
7
1020
1010
TYP.
235
235
115
920
230
130
180
200
8.1
21
26
41
50
95
60
20
2%.
MAX. UNIT CONDITIONS
1120
1000
100
125
220
300
0.5
0.5
50
10
35
65
MHz I
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
C
C
C
C
C
C
E
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
=1A, I
=2A, I
=5A, I
=2A, V
=5A, V
=10A, V
=100 A
=100 A
=1 A, RB 1k
=10mA*
=0.1A, I
=5A, I
=5A, V
=10mA, V
=100mA, V
=1A, V
=I
=150V,T
=150V,T
=6V
=150V
=150V
=10V, f=1MHz*
B2
ISSUE 2 - MAY 2006
=100mA
B
B
B
CE
CE
B
=100mA*
=100mA*
=500mA*
CE
CC
CE
=500mA*
B
=2V*
=2V*
=5mA*
=2V*
=2V*
=10V,
amb
amb
CE
CE
=2V*
=100 C
=100 C
=10V