2N5308-D75Z Fairchild Semiconductor, 2N5308-D75Z Datasheet
2N5308-D75Z
Related parts for 2N5308-D75Z
2N5308-D75Z Summary of contents
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... Base-Emitter Saturatin Voltage BE V (on) Base-Emitter On Voltage BE Small Signal Characteristics C Collector-Base Capacitance cb h Small-Signal Current Gain fe * Pulse Test: Pulse Width 300 s, Duty Cycle ©2002 Fairchild Semiconductor Corporation 2N5308 T =25 C unless otherwise noted A Parameter - Continuous T =25 C unless otherwise noted A Test Condition I = 10mA ...
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... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation T =25 C unless otherwise noted A Parameter Max. Units 625 mW 5.0 mW/ C 83.3 C/W 200 C/W Rev. B1, July 2002 ...
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... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B1, July 2002 ...
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CROSSVOLT â â â â Rev. I ...