JANTXV2N6804 International Rectifier, JANTXV2N6804 Datasheet - Page 2

• Manufacturer Part Number: JANTXV2N6804
• Description: POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-11A)
• Manufacturer: International Rectifier

Thermal Resistance
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
For footnotes refer to the last page
IRF9130
R thJC
R thJA
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
L S + L D
C iss
C oss
C rss
t f
I S
I SM
V SD
t rr
Q RR
t o n
BV DSS / T J
(off)
(on)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction to Case
Junction-to-Ambient
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
Min Typ Max Units
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—
Min Typ Max Units
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—
—
—
—
-100
Min
-2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
—
—
—
—
—
—
—
-0.087
1.67
Typ Max Units
860
350
125
30
6.1
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—
—
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—
—
—
—
—
—
—
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—
-4.7
-11
-50
3.0
250
0.35
-4.0
0.30
-250
-100
°C/W
100
140
140
140
-25
7.1
—
—
—
2 9
2 1
6 0
—
—
—
nS
µc
V
A
V/°C
S ( )
nH
nA
V
n s
nC
pF
V
A
soldered to a 2” square copper-clad board
T j = 25°C, I F =-11A, di/dt -100A/ s
T
j
= 25°C, I S =-11A, V GS = 0V
Measured from the center of
drain pad to center of source
p a d
Reference to 25°C, I D = -1.0mA
V DS = V GS , I D =-250µA
V GS =-10V, I D =-7.0A
V GS =-10V, I D =-11A
V DS >-15V, I DS =-7.0A
Test Conditions
Test Conditions
V GS = 0V, I D = -1.0mA
V GS = 0V, T J = 125°C
V DD =-50V, I D =-11A,
V GS =-10V, ID = -11A
V GS = 0V, V DS =25V
Test Conditions
V DS =-80V, V GS =0V
V DD -50V
f = 1.0MHz
V DS =-80V
V DS =-50V
V GS =-20V
V GS =-20V
R G =7.5
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