JANTXV2N6849 International Rectifier, JANTXV2N6849 Datasheet - Page 2

• Manufacturer Part Number: JANTXV2N6849
• Description: POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-6.5A)
• Manufacturer: International Rectifier

JANTX2N6849, JANTXV2N6849 Device
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Thermal Resistance
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
L D
L S
C iss
C oss
C rss
BV DSS / T J Temperature Coefficient of Breakdown
I S
I SM
V SD
t rr
Q RR
t on
R thJC
R thJA
Previous Datasheet
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Ambient
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
To Order
Min. Typ. Max. Units
Min. Typ. Max. Units
Index
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—
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Min. Typ. Max. Units
-100
14.7
-2.0
2.5
1.0
2.0
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—
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—
—
—
—
—
—
—
—
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—
—
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—
—
—
-0.10
350
125
800
5.0
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—
—
—
—
—
—
—
15
—
—
—
—
-4.7
-6.5
250
175
-25
3.0
5.0
0.345
-250
-100
0.30
34.8
-4.0
100
140
140
140
-25
7.1
—
—
—
—
—
21
60
—
—
—
K/W
ns
A
V
C
V/°C
S ( )
nA
nC
nH
ns
pF
V
V
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
A
T j = 25°C, I F = -6.5A, di/dt
T
j
Next Data Sheet
V DS = 0.8 x Max Rating,V GS = 0V
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
= 25°C, I S = -6.5A, V GS = 0V
Reference to 25°C, I D = -1.0 mA
V DS > -15V, I DS = -4.1A
V DS = V GS , I D = -250 A
Typical socket mount
V DS = Max. Rating x 0.5
V DS = 0.8 x Max Rating
V GS = 0V, I D = -1.0 mA
V GS = -10V, I D = -6.5A
Test Conditions
V GS = -10V, I D = -4.1A
V GS = -10V, I D = -6.5A
Test Conditions
R G = 7.5 , VGS = -10V
V GS = 0V, V DS = -25V
V GS = 0V, T J = 125°C
V DD = -50V, I D = -6.5A,
see figures 6 and 13
Test Conditions
V DD
see figure 10
V GS = -20V
see figure 5
f = 1.0 MHz
V GS = 20V
-50V
Modified MOSFET
symbol showing the
internal inductances.
-100A/ s