SIA444DJT Vishay Siliconix, SIA444DJT Datasheet

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SIA444DJT

Manufacturer Part Number
SIA444DJT
Description
N-Channel 30 V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet
www.DataSheet4U.com
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 67056
S10-2537-Rev. A, 08-Nov-10
Thin PowerPAK SC-70-6L-Single
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
30
(V)
0.022 at V
0.017 at V
R
DS(on)
GS
GS
J
()
= 4.5 V
= 10 V
= 150 °C)
b, f
N-Channel 30 V (D-S) MOSFET
Ordering Information: SiA444DJT-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
D
4.5
12
(A)
Steady State
a
d, e
T
T
T
T
T
T
T
T
T
T
t  5 s
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
Q
Part # code
= 25 °C, unless otherwise noted)
g
7 nC
(Typ.)
New Product
Symbol
Marking Code
R
R
thJA
thJC
Symbol
T
X X X
A M X
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Thermally Enhanced PowerPAK
• Compliant to RoHS Directive 2002/95/EC
• DC/DC Converter
• High Frequency Switching
Definition
SC-70 Package
- Small Footprint Area
- Ultra-Thin 0.6 mm height
Lot Traceability
and Date code
Typical
5.3
28
®
Power MOSFET
- 55 to 150
11
8.8
2.9
3.5
2.2
Limit
± 20
12
12
12
260
30
40
19
12
a, b, c
b, c
b, c
b, c
b, c
a
a
a
Maximum
6.5
36
Vishay Siliconix
G
SiA444DJT
®
N-Channel MOSFET
www.vishay.com
D
S
°C/W
Unit
Unit
°C
W
V
A
1

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SIA444DJT Summary of contents

Page 1

... Ultra-Thin 0.6 mm height • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter • High Frequency Switching Marking Code Part # code Lot Traceability and Date code Ordering Information: SiA444DJT-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted) A Symbol ° ° ...

Page 2

... SiA444DJT Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 67056 S10-2537-Rev. A, 08-Nov- 1.5 2.0 2 SiA444DJT Vishay Siliconix ° 125 ° 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 600 C iss 400 200 C ...

Page 4

... SiA444DJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 10 = 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.9 1.8 1.7 1.6 1.5 1.4 1 250 μA D 1.2 1.1 1.0 0 Temperature (°C) J Threshold Voltage www.DataSheet4U.com www.vishay.com 4 New Product = 25 ° 0.8 1.0 1 100 125 150 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. www.DataSheet4U.com Document Number: 67056 S10-2537-Rev. A, 08-Nov-10 75 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiA444DJT Vishay Siliconix 100 ...

Page 6

... SiA444DJT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 www.DataSheet4U.com Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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