SEP8706 Honeywell, SEP8706 Datasheet - Page 3

• Manufacturer Part Number: SEP8706
• Description: AlGaAs Infrared Emitting Diode
• Manufacturer: Honeywell

Fig. 1
Fig. 3
Fig. 5
SEP8706
AlGaAs Infrared Emitting Diode
54
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.6
1.5
1.4
1.3
1.2
1.1
1.0
Radiant Intensity vs
Angular Displacement
Forward Voltage vs
Forward Current
Spectral Bandwidth
760
-60
0
-45
Angular displacement - degrees
800
10
-30
Forward current - mA
Wavelength - nm
840
-15
20
880
0
+15 +30 +45 +60
30
920
960
40
gra_030.ds4
gra_201.ds4
gra_011.ds4
1000
50
Fig. 2
Fig. 4
Fig. 6
10.0
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
5.0
2.0
1.0
0.5
0.2
0.1
1.0
0.6
0.4
0.2
0.1
10
Radiant Intensity vs
Forward Current
Forward Voltage vs
Temperature
Coupling Characteristics
with SDP8406
6
4
2
0.01
10
-40
Lens-to-lens separation - inches
0.02
-15
I
T
F
A
= 20 mA
Forward current - mA
= 25 °C
Temperature - °C
0.05
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
20
10
I
T
0.1
F
V
A
= 20 mA
CE
= 25 °C
30
35
= 5V
0.2
40 50
60
0.5
gra_028.ds4
gra_208.ds4
gra_031.ds4
100
1.0
85