UPA2702TP NEC, UPA2702TP Datasheet

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UPA2702TP

Manufacturer Part Number
UPA2702TP
Description
SWITCHING N- AND P-CHANNEL POWER MOS FET
Manufacturer
NEC
Datasheet
1.UPA2702TP.pdf (8 pages)

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Company:
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Part Number:
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NEC
Quantity:
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Part Number:
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Part Number:
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NEC
Quantity:
20 000
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DESCRIPTION
MOS Field Effect Transistor designed for DC/DC converter and
power management applications of notebook computers.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
The PA2702TP, which has a heat spreader, is N-Channel
Low on-state resistance
R
R
Low C
Small and surface mount package (Power HSOP8)
DS(on)1
DS(on)2
PART NUMBER
2. PW
3. Starting T
iss
PA2702TP
G15845EJ2V0DS00 (2nd edition)
May 2002 NS CP(K)
this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated
voltage may be applied to this device.
= 9.5 m
= 15.1 m
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
= 900 pF TYP. (V
10 s, Duty Cycle
ch
MAX. (V
MAX. (V
Note2
C
A
= 25°C, V
= 25°C)
= 25°C)
Note3
Note3
DS
C
A
GS
= 25°C)
= 25°C)
GS
= 0 V)
GS
= 0 V)
= 10 V, I
DD
Note1
= 4.5 V, I
DS
N-CHANNEL POWER MOS FET
= 15 V, R
Power HSOP8
= 10 V, V
Note1
1%
PACKAGE
D
A
= 7.0 A)
D
= 25°C, Unless otherwise noted, All terminals are connected.)
= 7.0 A)
G
GS
= 25
The mark
DATA SHEET
= 0 V)
SWITCHING
I
I
I
D(pulse)
V
V
D(DC)1
D(DC)2
, L = 100 H, V
P
P
T
E
T
I
GSS
DSS
AS
stg
AS
T1
T2
ch
MOS FIELD EFFECT TRANSISTOR
shows major revised points.
–55 to +150
25.6
150
30
22
16
20
35
14
65
3
GS
= 20
PACKAGE DRAWING (Unit: mm)
8
1
1
8
mJ
W
W
°C
°C
0 V
V
V
A
A
A
A
5.2
4.1 MAX.
0.40
1.27 TYP.
2.0 ±0.2
+0.17
–0.2
+0.10
–0.05
9
5
4
4
5
PA2702TP
0.8 ±0.2
S
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1, 2, 3
4
5, 6, 7, 8, 9 ; Drain
©
4.4 ±0.15
6.0 ±0.3
Source
; Source
; Gate
Drain
Body
Diode
0.10
2002
S

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UPA2702TP Summary of contents

Page 1

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...

Page 2

... DSS Starting T TEST CIRCUIT 3 GATE CHARGE D.U. PG 25°C, Unless otherwise noted, All terminals are connected.) A SYMBOL TEST CONDITIONS DSS GSS GS(off) ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 T - Case Temperature - ˚C C FORWARD BIAS SAFE OPERATING AREA 1000 100 I 65 ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 25˚ 25˚C 75˚C 150˚C 0.1 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 Pulsed 4 100 125 150 T - Channel Temperature - ˚C ch ...

Page 6

Data Sheet G15845EJ2V0DS PA2702TP ...

Page 7

Data Sheet G15845EJ2V0DS PA2702TP 7 ...

Page 8

... NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others ...

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