FQB5P20 Fairchild Semiconductor, FQB5P20 Datasheet - Page 3

• Manufacturer Part Number: FQB5P20
• Description: 200V P-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
• Improved dv/dt capability
Characteristics
750
600
450
300
150
10
10
10
10
3.0
2.4
1.8
1.2
0.6
0.0
-1
-2
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : -5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
3
-V
-V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
10
, Drain Current [A]
0
0
V
V
GS
GS
= - 20V
= - 10V
6
C
C
C
iss
oss
rss
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
※ Note : T
9
gs
10
gd
ds
1
C
+ C
+ C
1
= 25℃
Typical
gd
gd
(C
※ Notes :
J
1. V
2. f = 1 MHz
ds
= 25℃
= shorted)
GS
= 0 V
12
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
1
0
-1
1
0
0.0
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
Variation vs. Source Current
0.5
2
25℃
150℃
150℃
4
-V
-V
Q
GS
SD
and Temperature
G
1.0
4
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
25℃
V
DS
V
DS
= -160V
V
DS
= -100V
-55℃
= -40V
1.5
6
6
2.0
8
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= -40V
= 0V
2.5
10
D
= -4.8 A
Rev. A, May 2000
3.0
10
12