HAF1001 Hitachi Semiconductor, HAF1001 Datasheet - Page 6

• Manufacturer Part Number: HAF1001
• Description: Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability
• Manufacturer: Hitachi Semiconductor

HAF1001
6
500
200
100
–20
–16
–12
50
20
10
–8
–4
–0.1 –0.2 –0.5 –1
0
Source to Drain Voltage
Reverse Drain Current
V
Pulse Test
di / dt = 50 A / µs
V
GS
GS
–0.4
Body–Drain Diode Reverse
Reverse Drain Current vs.
Souece to Drain Voltage
= –5 V
= 0, Ta = 25 °C
Recovery Time
–0.8
–2
–1.2
–5 –10 –20
0 V
I
V
DR
–1.6
SD
(A)
(V)
–2.0
–50
10000
1000
100
100
0.5
50
20
10
5
2
1
–0.1 –0.2 –0.5 –1
0
V
f = 1 MHz
Drain to Source Voltage V
GS
–10
Switching Characteristics
t f
Drain to Source Voltage
Typical Capacitance vs.
= 0
Drain Current
r t
V
PW = 300 µs, duty < 1 %
GS
t
–20
d(off)
= –5 V, V
t
d(on)
–2
–30
–5 –10 –20
I
D
DD
(A)
–40
= –30 V
DS
(V)
–50
–50