3SK296 Hitachi Semiconductor, 3SK296 Datasheet - Page 7

• Manufacturer Part Number: 3SK296
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

S Parameter (V
Freq.
(MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
MAG.
0.999
0.998
0.992
0.988
0.985
0.976
0.971
0.964
0.961
0.951
0.949
0.935
0.933
0.923
0.916
0.908
0.900
0.890
0.876
DS
= 4 V, V
ANG.
–6.1
–9.1
–11.9
–14.8
–17.9
–20.6
–23.2
–26.3
–29.1
–32.2
–35.0
–37.6
–40.5
–42.9
–45.8
–49.0
–51.2
–54.0
–56.4
G2S
S21
MAG.
1.98
1.97
1.96
1.96
1.94
1.92
1.91
1.88
1.87
1.86
1.86
1.81
1.78
1.77
1.75
1.72
1.70
1.67
1.65
= 3 V, I
D
ANG.
172.2
168.4
165.0
161.0
157.1
153.7
149.9
146.8
142.8
139.4
136.1
132.9
129.4
125.7
122.6
119.1
115.8
112.6
109.3
= 10 mA, Z
S12
MAG.
0.00094
0.00189
0.00230
0.00286
0.00364
0.00353
0.00419
0.00495
0.00509
0.00530
0.00550
0.00601
0.00582
0.00572
0.00553
0.00514
0.00543
0.00506
0.00469
O
= 50 )
ANG.
79.2
80.4
79.5
79.9
75.2
71.8
70.7
65.5
62.7
66.6
63.8
58.2
60.6
58.5
56.3
56.3
52.9
52.4
51.9
S22
MAG.
0.989
0.987
0.986
0.984
0.981
0.978
0.975
0.972
0.968
0.963
0.960
0.956
0.950
0.945
0.941
0.936
0.930
0.924
0.919
3SK296
ANG.
–4.2
–6.1
–7.9
–9.8
–11.5
–13.4
–15.2
–17.2
–19.1
–20.8
–22.8
–24.5
–26.3
–28.0
–29.9
–31.7
–33.4
–35.2
–37.0
7