BB501M Hitachi, BB501M Datasheet - Page 5

• Manufacturer Part Number: BB501M
• Description: Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
• Manufacturer: Hitachi

200
150
100
50
20
16
12
8
4
0
0
V
R
Drain Current vs. Gate1 Voltage
Ambient Temperature
DS
G
Gate1 Voltage
= 33 kΩ
Maximum Channel Power
1
50
= 5 V
Dissipation Curve
2
100
V
3
G1
150
Ta (°C)
(V)
4
200
5
20
16
12
20
16
12
8
4
8
4
0
0
V
V
V
R
Drain to Source Voltage
G2S
G1
DS
G
Drain Current vs. Gate1 Voltage
Typical Output Characteristics
= 47 kΩ
Gate1 Voltage
= V
1
1
= 4 V
= 5 V
DS
2
2
3
3
V
G1
3 V
V
(V)
4
4
BB501M
DS
4 V
2 V
(V)
5
5
5