sch2822 Sanyo Semiconductor Corporation, sch2822 Datasheet - Page 2

• Manufacturer Part Number: sch2822
• Description: Mosfet P-channel Silicon Mosfet Sbd Schottky Barrier Diode
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25°C
Package Dimensions
unit : mm (typ)
7028-003
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
1
6
Parameter
1.6
5
2
0.5
4
3
0.2
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
SANYO : SCH6
0.2
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
t d (on)
t d (off)
 yfs 
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
Qg
V R
V F
I R
t rr
C
t r
t f
I D =--1mA, V GS =0V
V DS =--20V, V GS =0V
V GS =±8V, V DS =0V
V DS =--10V, I D =- -1mA
V DS =--10V, I D =- -0.5A
I D =--0.5A, V GS =- -4V
I D =--0.3A, V GS =- -2.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =--10V, V GS =- -4V, I D =- -1A
V DS =--10V, V GS =- -4V, I D =- -1A
V DS =--10V, V GS =- -4V, I D =- -1A
I S =--1A, V GS =0V
I R =0.5mA
I F =0.5A
V R =6V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
SCH2822
Conditions
Electrical Connection
1
6
2
5
3
4
min
0.72
--0.4
--20
15
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
Top view
Ratings
typ
--0.89
380
540
115
1.2
1.5
0.4
0.3
0.4
23
15
15
13
8
6
7
max
0.46
--1.4
--1.2
±10
500
760
No. A0668-2/6
90
10
--1
Unit
mΩ
mΩ
µA
µA
nC
nC
nC
µA
pF
pF
pF
ns
ns
ns
ns
pF
ns
V
V
S
V
V
V